GaAs/GaAlAs heterojunction bipolar transistors with cutoff frequencies above 10 GHz
Abstract
This paper describes the fabrication and high-frequency performance of an n-p-n GaAs/GaAlAs heterojunction bipolar transistor. The fabrication process utilized molecular beam epitaxy, and featured a nominal base layer thickness of 500 A. The cutoff frequency of the transistor was measured to be 11 GHz (a value which was limited by parasitic elements associated with bonding pads and bond-wires).
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 1982
- DOI:
- 10.1109/EDL.1982.25602
- Bibcode:
- 1982IEDL....3..366A
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Frequency Response;
- Gallium Arsenides;
- Heterojunction Devices;
- Molecular Beam Epitaxy;
- Equivalent Circuits;
- Fabrication;
- Microwave Circuits;
- N-P-N Junctions;
- Performance Prediction;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering