A proposed new method for damping relaxation oscillations in laser diodes
Abstract
A new concept of damping relaxation oscillations in injection laser diodes is described. This method involves the operation of the laser as a part of a bipolar transistor, and the damping is accomplished by reducing the carrier lifetime in the laser active region only at frequencies near resonance. The advantage of the proposed method is that the damping mechanism does not affect the laser operation at any other frequency range.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- November 1982
- DOI:
- 10.1109/EDL.1982.25591
- Bibcode:
- 1982IEDL....3..333K
- Keywords:
-
- Damping;
- Injection Lasers;
- Laser Outputs;
- Relaxation Oscillators;
- Semiconductor Diodes;
- Bipolar Transistors;
- Carrier Density (Solid State);
- Carrier Lifetime;
- Charge Carriers;
- Life (Durability);
- Resonant Frequencies;
- Transistor Circuits;
- Lasers and Masers