High performance ion-implanted low noise GaAs MESFET's

The reproducible fabrication of high-performance, low-noise GaAs requires an employment of optimal materials and manufacturing techniques which assure a reproducible implementation of the processing steps. The employment of ion implantation procedures makes it possible to satisfy the manufacturing requirements. Additional advantages of ion implantation are related to economy and the ability to fabricate planar structures for microwave discrete devices and monolithic integrated circuits and GaAs digital circuits. The present investigation is concerned with reproducible, high-performance, low-noise GaAs MESFET's fabricated by ion implantation without using deeply recessed gate structures. The average performance of the devices includes a 1.6 dB noise figure and 10 dB associated gain at 12 GHz. The GaAs materials used are unintentionally doped AsCl3 buffer layers grown on Cr-doped substrates with thicknesses varying from 1 micrometer to 2 micrometers.