A GaAs monolithic frequency divider using source coupled FET logic
Abstract
A GaAs monolithic binary frequency divider based on the new source coupled FET logic (SCFL) is reported. A very wide range for the threshold voltage in the constituent FET's is allowable because in principle the SCFL operates in a current mode. A single-clocked SCFL master-slave frequency divider was successfully fabricated with 1 micron-gate MESFET's with a threshold voltage ranging from -0.7 V to +0.2 V. The highest operating frequency was 2.5 GHz at the power consumption of 25 mW.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- August 1982
- DOI:
- 10.1109/EDL.1982.25549
- Bibcode:
- 1982IEDL....3..197K
- Keywords:
-
- Field Effect Transistors;
- Frequency Dividers;
- Gallium Arsenides;
- Integrated Circuits;
- Transistor Logic;
- Chips (Electronics);
- Energy Consumption;
- Fabrication;
- Schottky Diodes;
- Threshold Voltage;
- Thresholds;
- Electronics and Electrical Engineering