Enhancement of electron velocity in modulation-doped /Al, Ga/As/GaAs FETs at cryogenic temperatures
Abstract
- Publication:
-
Electronics Letters
- Pub Date:
- November 1982
- DOI:
- 10.1049/el:19820722
- Bibcode:
- 1982ElL....18.1057D
- Keywords:
-
- Electron Mobility;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Volt-Ampere Characteristics;
- Aluminum Gallium Arsenides;
- Cryogenics;
- Doped Crystals;
- Performance Tests;
- Saturation;
- Electronics and Electrical Engineering