Dielectric constant of semi-insulating indium phosphide
Abstract
An experimental investigation is conducted in order to determine the static dielectric constant of semi-insulating indium phosphide with accuracy sufficient for the design of monolithic millimeter-wave microstrip circuits. The measurement approach utilized the collection of a large number of data points at convenient frequencies from 4-18 GHz, each having better than 2% accuracy (most better than 0.5%), and then a statistical average value was determined, whose accuracy was much better than that of each individual data point. It is concluded that the static dielectric constant is within less than 0.5% of 12.55 for semi-insulating indium phosphide.
- Publication:
-
Electronics Letters
- Pub Date:
- November 1982
- DOI:
- 10.1049/el:19820675
- Bibcode:
- 1982ElL....18..987N
- Keywords:
-
- Indium Phosphides;
- Integrated Circuits;
- Microwave Circuits;
- Permittivity;
- Semiconductor Devices;
- Czochralski Method;
- Doped Crystals;
- Microstrip Devices;
- Semiconductors (Materials);
- Electronics and Electrical Engineering