Far-field radiation patterns of multiple quantum well lasers grown by MO-CVD
Abstract
The far-field radiation patterns of multiple quantum well lasers grown by metal-organic chemical vapour deposition (MO-CVD) with conducting stripe widths of 3, 5, 7 and 9 microns were studied. The results show that the existing antiguidance effect in conventional heterostructure GaAs/GaAlAs lasers is stronger in quantum well lasers due mainly to the thinner active regions.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1982
- DOI:
- 10.1049/el:19820518
- Bibcode:
- 1982ElL....18..765H
- Keywords:
-
- Crystal Growth;
- Far Fields;
- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Quantum Electronics;
- Vapor Deposition;
- Aluminum Gallium Arsenides;
- Antenna Radiation Patterns;
- Organic Compounds;
- Packing Density;
- Semiconductor Junctions;
- Lasers and Masers