Interdigitated pn junction device with novel capacitance/voltage characteristic, ultralow capacitance and low punch-through voltage

The first demonstration of the recently disclosed channelling diode is reported. The structure combines important and unique features which can be used for a large variety of applications. The diode exhibits a novel capacitance/voltage characteristic; large capacitance variations (1 pF) have been achieved over a small voltage range. Operated as a PIN diode the device has an ultralow capacitance (0.05 pF) and a low punch-through voltage (2-3 V). This small capacitance is largely independent of the detector area and of the doping of the layers. These features are important for ultralow noise PINFET receiver applications.