Lateral grating array high power CW visible semiconductor laser
Abstract
A periodic, grating-like array of substrate grooves oriented parallel to the longitudinal axis of the laser provides a small periodic lateral thickness modulation of the active region of an MO-CVD-grown Ga(1-x)Al(x)As laser producing phase-locked operation at 7680 A. CW output powers as high as 138 mW/facet have been obtained.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1982
- DOI:
- 10.1049/el:19820372
- Bibcode:
- 1982ElL....18..549S
- Keywords:
-
- Aluminum Gallium Arsenides;
- Continuous Wave Lasers;
- Gratings (Spectra);
- High Power Lasers;
- Phase Locked Systems;
- Semiconductor Lasers;
- Far Fields;
- Grooves;
- Laser Materials;
- Laser Outputs;
- Substrates;
- Lasers and Masers