Surface-emitting GaInAsP/InP injection laser with short cavity length
Abstract
A surface-emitting GaInAsP/InP injection laser with short cavity length (approximately equal to 10 microns) has been developed which operates at 1.22 microns, with a threshold current of 160 mA, or 33 kA/sq cm at 77 K. No side-emitting mode was observed as a result of preparing long absorbing regions and a small dot electrode of 25-micron phi value. One of the longitudinal modes, with a spacing of 170 A, dominated above threshold and the far-field radiation angle was sharp
- Publication:
-
Electronics Letters
- Pub Date:
- May 1982
- DOI:
- 10.1049/el:19820314
- Bibcode:
- 1982ElL....18..461M
- Keywords:
-
- Heterojunction Devices;
- Indium Phosphides;
- Injection Lasers;
- Laser Cavities;
- Semiconductor Lasers;
- Far Fields;
- Laser Materials;
- Laser Modes;
- Permittivity;
- Planar Structures;
- Threshold Currents;
- Lasers and Masers