Single-carrier-type dominated impact ionisation in multilayer structures
Abstract
A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1982
- DOI:
- Bibcode:
- 1982ElL....18..375B
- Keywords:
-
- Aluminum Gallium Arsenides;
- Avalanche Diodes;
- Carrier Injection;
- Ionization;
- Photometers;
- Semiconductor Devices;
- Electric Fields;
- Electron Impact;
- Holes (Electron Deficiencies);
- Electronics and Electrical Engineering