Q-band /26-40 GHz/ GaAs FET single-stage amplifier
Abstract
The high-frequency S-parameters of a 0.3 micron-gate-length GaAs FET have been measured and compared with the device equivalent circuit model. From the data, a Q-band single-stage low noise (3.1 dB) amplifier was designed.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1982
- DOI:
- Bibcode:
- 1982ElL....18..260O
- Keywords:
-
- Amplifier Design;
- Equivalent Circuits;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Photolithography;
- Gates (Circuits);
- High Frequencies;
- Low Noise;
- Network Analysis;
- Electronics and Electrical Engineering