Short-channel GaAs FET fabricated like a MESFET but operating like a JFET

Normally-on GaAs field-effect transistors (FETs) having 1-micron gate lengths and 4-micron channel lengths, were fabricated in structures grown by molecular beam epitaxy. The unique part of this device is the very thin p(+)/n(+) structure used to replace the conventional Schottky barriers. The device fabrication procedure is identical to that of a Schottky barrier FET, but the devices exhibit characteristics similar to that of a junction field-effect transistor. This new device, the camel diode gate FET, is expected to have applications in both logic and power devices.