High-efficiency millimetre-wave InP TEOs made by liquid phase epitaxy
Abstract
High-efficiency InP TEO devices have been fabricated by depositing gold-germanium contacts directly on thinned epitaxial layers using DC magnetron sputtering. The best RF performance has been obtained at 34 GHz for devices with an active layer length of 4.4 microns. The highest efficiency measured was 7.6% with 417 mW of power output at 34 GHz; the highest power output was 519 mW with 5.8% efficiency.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1982
- DOI:
- 10.1049/el:19820118
- Bibcode:
- 1982ElL....18..171Y
- Keywords:
-
- Energy Conversion Efficiency;
- Indium Phosphides;
- Liquid Phase Epitaxy;
- Microwave Oscillators;
- Millimeter Waves;
- Transferred Electron Devices;
- Low Noise;
- Power Conditioning;
- Power Efficiency;
- Sputtering;
- Vapor Deposition;
- Electronics and Electrical Engineering