Punch-through technique for charge collection in an extrinsic Si IRCCD

The operation of an extrinsic silicon infrared CCD with punch-through charge input is demonstrated using a 16-bit surface channel CCD. The CCD is fabricated in an epitaxial layer on an indium-doped substrate, and an MOS gate controlled punch-through mechanism is used to couple the substrate and CCD together. By using the clocking electrodes themselves, the requirement for separate transfer and storage gates on the periphery of the CCD is obviated, leading to a relatively compact structure.