New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regions
Abstract
A new low-excess-noise avalanche detector is proposed. In this structure electrons and holes are spatially separated and impact ionized in regions of different bandgap. The ionization rates ratio can thus be made extremely high (100 and higher) by suitably choosing the bandgap difference, so that the device mimics a photomultiplier. This new concept is applicable to most III-V lattice-matched heterojunctions, including long-wavelength materials.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1982
- Bibcode:
- 1982ElL....18...12V
- Keywords:
-
- Avalanche Diodes;
- Holes (Electron Deficiencies);
- Ion Production Rates;
- Low Noise;
- Photodiodes;
- Semiconductor Diodes;
- Band Structure Of Solids;
- Energy Gaps (Solid State);
- Semiconductors (Materials);
- Electronics and Electrical Engineering