Electron mobility in MOS transistors with short channels

The physical factors determining the carrier mobility in the channels of MOS transistors are analyzed, and the possibilities of measuring this mobility are studied. The technical and fundamental limitations of the measurement of this parameter are examined for the general case and for the case when the channel length of the MOS transistors in integrated circuits is reduced. Results are presented for experiments concerning the effective mobility and the field-effect mobility of the carriers in the MOS channel. It is found that the electron mobility in the channel decreases as the length of the channel decreases.