High power CW single-drift Impatt diodes at W-band
Abstract
Single diffusion step-fabricated high power n- and p-type Impatt diodes are described which have exhibited a 90 GHz maximum CW output power of 250 mW. Efficiencies were 5.5 and 6.5 percent for the n- and p-type diodes, respectively. An FM noise level of 31 dB for n-type diodes was determined by means of a direct detection apparatus employing a quasi-optical resonator.
- Publication:
-
Archiv Elektronik und Uebertragungstechnik
- Pub Date:
- December 1982
- Bibcode:
- 1982ArElU..36..481L
- Keywords:
-
- Avalanche Diodes;
- Fabrication;
- N-Type Semiconductors;
- P-Type Semiconductors;
- Millimeter Waves;
- Output;
- Power Efficiency;
- Electronics and Electrical Engineering