Crystallization of amorphous silicon on silica by cw laser irradiation
Abstract
Laser crystallization was performed by scanning the substrate through a stationary cw Ar+ laser beam. Amorphous films show two abrupt changes in the optical transmission spectra as a function of laser power. At the first step no grains are observed with 10-nm resolution. The second optical change is accompanied by clear crystallinity with grains from submicron to several 100-μm size.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 1982
- DOI:
- 10.1063/1.93030
- Bibcode:
- 1982ApPhL..40..166B
- Keywords:
-
- Amorphous Semiconductors;
- Amorphous Silicon;
- Continuous Wave Lasers;
- Crystallization;
- Radiation Effects;
- Silicon Oxides;
- Argon Lasers;
- Electron Microscopy;
- Grain Boundaries;
- Microstructure;
- Nucleation;
- Polycrystals;
- Semiconducting Films;
- Thin Films;
- Solid-State Physics