Ellipsometric study of silicon nitride on gallium arsenide
Abstract
A method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.
- Publication:
-
Applied Physics Communications
- Pub Date:
- 1982
- Bibcode:
- 1982ApPhC...1..163A
- Keywords:
-
- Dielectrics;
- Ellipsometers;
- Gallium Arsenides;
- Silicon Nitrides;
- Thin Films;
- Auger Spectroscopy;
- Dielectric Polarization;
- Semiconductors (Materials);
- Solid-State Physics