Reliability and degradation: Semiconductor devices and circuits

A description is provided of recently developed techniques which shed new light on the physical processes involved in device degradation. Mechanisms and interfacial layers in silicide formation are examined, taking into account the platinum silicide system, the properties of silicides, alloy and bilayer silicides, ion mixing and laser annealing, and electrical properties. Interdiffusion of metal films on gallium arsenide and indium phosphide is considered along with aspects of reliability and degradation of silicon devices and integrated circuits. Questions regarding the reliability and degradation of active III-V semiconductor devices are explored, giving attention to a small signal GaAs FET reliability assessment, power GaAs FET reliability, catastrophic failures, adverse ambient effects, the reliability of other GaAs devices, and materials related problems. The reliability and degradation of lasers and LEDS, and of microwave integrated circuits is also discussed.