MNOS BORAM manufacturing methods and technology project

A manufacturing methods project has been initiated to establish production techniques for 8K-bit metal-nitride-oxide semiconductor (MNOS) block-oriented random-access memory (BORAM) devices, to establish the performance adequacy and reproducibility of such MNOS BORAM devices for military environments, and to demonstrate a production rate of 500 multicuip MNOS BORAM hybrid circuits per month. During the past reporting period the project has focused on definition of tests, development of test equipment, and preparation of test programs. In particular, studies have been conducted to determine the feasibility of using an automated retention projection test as part of a manufacturing screen.