Integrated balanced FETS for broadband millimeter wave amplifiers
Abstract
Using electron-beam exposure and MBE GaAs, balanced FETs were designed and fabricated. While the devices exhibited excellent dc characteristics, their single-sided RF performance was not up to expectations, for reasons yet to be determined. This report is an interim account of a program being continued under a different contract number (N00014-81-C-0270).
- Publication:
-
Final Report
- Pub Date:
- August 1981
- Bibcode:
- 1981vara.reptS....B
- Keywords:
-
- Broadband Amplifiers;
- Field Effect Transistors;
- Millimeter Waves;
- Design Analysis;
- Direct Current;
- Electron Beams;
- Gallium Arsenides;
- Gates (Circuits);
- Electronics and Electrical Engineering