A study of flicker noise in MOSFETS
Abstract
Temperature fluctuations, i/f and g-r noise has been measured and empirically modeled in thin pyroelectric films, in P-implanted buried-channel and weakly inverted MOSFETs. Number and mobility fluctuation models are being used. Reference is made to papers published or in print.
- Publication:
-
Final Report
- Pub Date:
- March 1981
- Bibcode:
- 1981umn..rept.....V
- Keywords:
-
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Thermal Noise;
- Gallium Arsenides;
- Noise Measurement;
- Temperature Gradients;
- Thin Films;
- Electronics and Electrical Engineering