Monolithic integration of microwave GaAs power FETs
Abstract
Efforts during the third year of this contract have included further performance improvements of the two-stage monolithic push-pull amplifier, successful demonstration of the paraphase amplifier at lower X-band frequencies, testing of the fully integrated push-pull (FIPP) discrete devices and design and development of a mask set for an X-band dual-gate push-pull power FET device structure. Performance results for the two-stage push-pull amplifier include a saturated CW output power of 1.4W, a small signal gain of 16 dB with a 1 dB gain compression point of 1.3 W at 9.0 GHz. The paraphase amplifier has demonstrated active balun action from 6.5 to 9.0 GHz. The gain is -3 dB for each antiphase output at 8.0 GHz and tracks within + or - 0.75 dB over the 6.5 to 9.0 GHz frequency range. Phase tracking of the 180 deg characteristic is within + or - 20 deg. Preliminary results for the 1.2 mm gate width FIPP devices indicate higher small signal gains than for conventional FETs with comparable gate width. Narrow-band small signal gains up to 12 dB have been obtained at 10 GHz.
- Publication:
-
Annual Technical Report
- Pub Date:
- January 1981
- Bibcode:
- 1981ti...rept.....S
- Keywords:
-
- Field Effect Transistors;
- Integrated Circuits;
- Push-Pull Amplifiers;
- Transistor Amplifiers;
- Capacitors;
- Fabrication;
- Gallium Arsenides;
- Gates (Circuits);
- Performance Tests;
- Electronics and Electrical Engineering