Innovative measurement technology for the semiconductor device industry based on electron spectroscopy
Abstract
Electron spectroscopy techniques used in conjunction with ion etching for characterizing materials and structures used in semiconductor device technology were investigated. The capabilities and limitations of these techniques were established and their application in studies of the chemistry, stoichiometry, and morphology of interfaces present in MOS device structures investigated.
- Publication:
-
Stanford Univ. Report
- Pub Date:
- November 1981
- Bibcode:
- 1981stan.reptR....H
- Keywords:
-
- Electron Microscopy;
- Etching;
- Ion Irradiation;
- Metal Oxide Semiconductors;
- Electrochemistry;
- Interfaces;
- Ion Implantation;
- Morphology;
- Stoichiometry;
- Instrumentation and Photography