Apparatus and technique for pulsed electron beam annealing for solar cell production
Abstract
Many of the demands of high-throughput processing of solar cells can be satisfied by transient methods using pulsed electron beams. A prototype pulsed electron beam processor for solar cell production has been built, and is intended for automated annealing of solar cell junction ion implantation at a rate of 1200-1800 silicon wafers per hour. Other applications include solar cell junctions by pulse diffusion, annealing of ion-implanted back surface fields, and pulse sintering of cell metallization.
- Publication:
-
15th Photovoltaic Specialists Conference
- Pub Date:
- 1981
- Bibcode:
- 1981pvsp.conf..976L
- Keywords:
-
- Annealing;
- Electron Beams;
- Ion Implantation;
- Silicon Films;
- Solar Cells;
- Wafers;
- Design Analysis;
- Fabrication;
- Performance Prediction;
- Prototypes;
- Pulsed Radiation;
- Volt-Ampere Characteristics;
- Engineering (General)