Effects of dV/dt in MOSFET and bipolar junction transistor switches
Abstract
Spurious turn-on due to dV/dt triggering is a real possibility in high speed switching circuits using MOSFETs or bipolar junction transistors (BJTs). This paper discusses the mechanisms leading to spurious turn-on, test methods to determine dV/dt limits, the effect of dV/dt turn-on circuit operation, and methods to minimize dV/dt triggering in practical circuits.
- Publication:
-
PESC 1981; Power Electronics Specialists Conference
- Pub Date:
- 1981
- Bibcode:
- 1981ppes.conf..258S
- Keywords:
-
- Bipolar Transistors;
- Circuit Reliability;
- Field Effect Transistors;
- Switching Circuits;
- Transient Response;
- Transistor Circuits;
- High Speed;
- Junction Transistors;
- Metal Oxide Semiconductors;
- Off-On Control;
- Test Equipment;
- Time Lag;
- Trigger Circuits;
- Electronics and Electrical Engineering