Modeling of thin-film GaAs growth
Abstract
A solid Monte Carlo model is constructed for the simulation of crystal growth. The model assumes thermally accommodated adatoms impinge upon the surface during a delta time interval. The surface adatoms are assigned a random energy from a Boltzmann distribution, and this energy determines whether the adatoms evaporate, migrate, or remain stationary during the delta time interval. For each addition or migration of an adatom, potential wells are adjusted to reflect the absorption, migration, or desorption potential changes.
- Publication:
-
Progress Report
- Pub Date:
- October 1981
- Bibcode:
- 1981odu..reptQ....H
- Keywords:
-
- Crystal Growth;
- Gallium Arsenides;
- Molecular Interactions;
- Phase Transformations;
- Thin Films;
- Boltzmann Distribution;
- Computerized Simulation;
- Crystallinity;
- Monte Carlo Method;
- Surface Energy;
- Solid-State Physics