Pulsed laser diode reliability tests
Abstract
Results of accelerated life testing of AlGaAs laser diodes, operated pulsed rather than CW, are presented, in which constant stress testing methods are used. The applicability of the Arrhenius relation is determined by testing at three temperatures. Measurements are obtained for optical power, wavelengths of emission, power intensity curves, far field image, and power into solid angles. A thermally controlled environment is provided by placing the diodes on thermoelectric coolers operated in reverse, and all parameters are measured at a controlled room temperature (27 C). The concept and design of the life test, the method of testing, the preliminary test results, and failure analyses are presented.
- Publication:
-
NTC 1981; National Telecommunications Conference, Volume 1
- Pub Date:
- 1981
- Bibcode:
- 1981ntc.....1...10T
- Keywords:
-
- Accelerated Life Tests;
- Aluminum Gallium Arsenides;
- Pulsed Lasers;
- Reliability Analysis;
- Semiconductor Lasers;
- Electronic Equipment Tests;
- Failure Analysis;
- Far Fields;
- Gallium Arsenide Lasers;
- Performance Tests;
- Room Temperature;
- Temperature Control;
- Temperature Dependence;
- Thermal Stresses;
- Electronics and Electrical Engineering