Simulation of pulsed IMPATT oscillators and injection-locked amplifiers
Abstract
A method for simulating the dynamic behavior of pulsed IMPATT oscillators using a quasi-static approximation is presented. The method used to characterize the IMPATT diode is explained. A particular circuit model is used which models the cylindrical cavity power combining circuit. The overall device-circuit interaction technique is outlined. Simulation results for a high-low, single-drift X-band GaAs IMPATT are presented. The method presented here can be employed for any type of IMPATT device. The pulsed oscillator properties of double-drift IMPATT diode structures are presently being investigated.
- Publication:
-
Michigan Univ. Final Report
- Pub Date:
- October 1981
- Bibcode:
- 1981muaa.reptQ....M
- Keywords:
-
- Avalanche Diodes;
- Microwave Amplifiers;
- Microwave Oscillators;
- Pulse Generators;
- Simulation;
- Cavity Resonators;
- Circuits;
- Cylindrical Bodies;
- Gallium Arsenides;
- Interpolation;
- Statics;
- Superhigh Frequencies;
- Electronics and Electrical Engineering