InP materials
Abstract
The improvement of the yield of high purity polycrystalline InP as source material for crystal growth and the optimization of the liquid encapsulated Czochralski (LEC) method to grow crystals with low dislocation density and uniform dopant concentration was undertaken. Reproducible twin free growth in the lower gradient by modifying the pulling rod and its rotation mechanism to reduce system vibration was obtained. An X-ray topography and CO2 laser transmission show that doped LEC crystals contain prominant growth striations, probably produced by random convection currents in the melt, that are associated with abrupt changes in dopant concentration. Infrared transmission at 10.6 microns was measured on p-type InP samples to determine the free carrier absorption due to holes. It is found that the absorption cross section is much higher for holes than for electrons.
- Publication:
-
Massachusetts Inst. of Tech. Report
- Pub Date:
- September 1981
- Bibcode:
- 1981mit..rept.....I
- Keywords:
-
- Absorption Cross Sections;
- Carbon Dioxide Lasers;
- Crystal Growth;
- Indium Phosphides;
- Charge Carriers;
- Molecular Rotation;
- Striation;
- Temperature Gradients;
- X Ray Diffraction;
- Solid-State Physics