Reliability of high-power pulsed IMPATT diodes

Because of their present and future use in military systems, particularly missile seekers, high power pulsed IMPATT reliability is of considerable interest. This report is concerned with a reliability study of gallium arsenide double-drift pulsed IMPATTs of the Read doping profile type, that is both n and p active regions and contains avalanche confining doping structures. Both short-term (freak failure region) and long-term reliability testing have been carried out, comparing performance and failure mechanisms of the gallium arsenide devices with a smaller number of silicon flat profile double-drift devices, and Schottky-barrier, single-drift, low-high-low doping profile gallium arsenide devices. In the second phase of testing, devices were stressed under oscillating conditions, with a set of increasing bias current values, until failure occurred. The test was repeated at 16 different pulse widths and duty cycle combinations allowing determination of the most stringent operating conditions, and evaluation of failure mechanisms characteristic of such overstress. The third phase of testing was directed at examination of long-term reliability and wear-out failure mechanisms. Both a high temperature storage step-stress test and a long-term operation constant stress test were carried out.