Semiconducting diamond - An ultrafast, room-temperature infrared detector
Abstract
The dynamics of the photoconductive response in type IIb diamonds doped with boron during formation were investigated using nanosecond pulse excitations. Several natural and one synthetic diamond were examined by mounting in a coaxial line with one end biased by a less than 20 V dc power supply and the other connected to an oscilloscope. Contact effects were reduced by the establishment of ohmic contacts with small drops of Ag silver circuit paint on the crystals. A Nd:glass laser was employed as an excitation source and a Q-switched Nd:YAG laser was used with an H2 Raman cell to generate anti-Stokes emission at 0.46, 0.54, and 0.76 micron and Stokes emission at 1.9 micron by stimulated Brillouin scattering. The spike-to-tail responses in the synthetic diamond were an order of magnitude greater than in the natural diamonds, due to lower N donor concentrations. The use of semiconducting diamonds as IR detectors at room temperature is indicated.
- Publication:
-
Lasers 1980; Proceedings of the International Conference
- Pub Date:
- 1981
- Bibcode:
- 1981lase.conf..110Y
- Keywords:
-
- Diamonds;
- Infrared Detectors;
- Photoconductivity;
- Room Temperature;
- Semiconductors (Materials);
- Time Response;
- Boron;
- Brillouin Effect;
- Doped Crystals;
- Light Scattering;
- Neodymium Lasers;
- Q Switched Lasers;
- Yag Lasers;
- Electronics and Electrical Engineering