Improved liquid phase epitaxial GaAs for low series resistance Schottky barrier mixer diodes
Abstract
Millimeter wave Schottky barrier mixer diodes are extremely important devices for radio astronomy. The performance of the Schottky diodes depends largely on the characteristics and quality of the GaAs epitaxial materials used. Systematic manipulation of the liquid phase epitaxial growth conditions and substrate surface treatments has yielded significantly improved surface morphology. Initial problems of high resistivity interfacial layers have been reduced without the use of an in situ etchback. Two-micron diameter Schottky diodes fabricated from epitaxial layers grown at 725 C exhibit a 9-ohm series resistance very near the theoretical minimum.
- Publication:
-
SOUTHEASTCON 1981; Proceedings of the Region 3 Conference and Exhibit
- Pub Date:
- 1981
- Bibcode:
- 1981ieee.conf..740B
- Keywords:
-
- Electrical Resistivity;
- Gallium Arsenides;
- Liquid Phase Epitaxy;
- Microwave Circuits;
- Mixing Circuits;
- Schottky Diodes;
- Charge Carriers;
- Millimeter Waves;
- Pinholes;
- Radio Astronomy;
- Substrates;
- Surface Properties;
- Electronics and Electrical Engineering