Reliability investigation of low noise GaAs FETs

The objective of the program was to assess the reliability and operating life characteristics of low noise, small signal, microwave, n-channel, gallium arsenide (GaAs), metal epitaxial semiconductor field effect transistors (MESFETs) with a Schottky-barrier gate, and to identify associated failure mechanisms with notice to the supplier that the devices would be used in a testing program sponsored by the Department of Defense and that results would be reported to the Government. The FETs obtained represented a broad cross section of currently available devices, and included both gold-based and aluminum gate metallizations with gate lengths nominally from 0.5 microns to 1.2 microns.