The formation of the Schottky Barrier at the V/Si interface

Synchrontron radiation photoemission measurements have been used to study the behavior of the Schottky barrier height 00 bn and electronic structure of the V/Si interface for both cleaved Si (111)-(2x1) and sputter-cleaned Si(111)-(7x7) surfaces. Although the Schottky barrier height 0 bn of the clean surface is influenced by surface reconstruction, the barrier becomes pinned at a position essentially independent of the initial clean surface structure.