4 GHz band FET amplifier with the noise temperature of 55K at -50 deg C
Abstract
A thermoelectrically cooled 4 GHz band FET amplifier with a noise temperature of 55K developed as a low noise amplifier for satellite communications earth stations is described. It is pointed out that the method of broadband noise matching is used in the design. The difference between the maximum and minimum noise temperature within the frequency band of the amplifier is 3 K, a value consistent with the theoretical value.
- Publication:
-
10th European Microwave Conference
- Pub Date:
- 1981
- Bibcode:
- 1981eumw.conf..690N
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Microwave Amplifiers;
- Noise Temperature;
- Thermoelectric Cooling;
- Transistor Amplifiers;
- Broadband;
- Ground Stations;
- Low Noise;
- Spacecraft Communication;
- Electronics and Electrical Engineering