GaAs p/+/-n/+/-i/nu/-n/+/ Tunnett diode

The Tunnett (for tunnel injection transit time) diode is evaluated and found to be useful in the frequency range from 100 to 1000 GHz following SIT up to 100 GHz. It is pointed out that the higher oscillation frequency with lower bias voltage and lower noise level of the Tunnett diode are superior to those of the Impatt diode. GaAs Tunnett diodes with a p/+/-n/+/-i/nu/-n/+/ structure are fabricated by a new technique in order to overcome the low efficiency of the p/+/-n and p/+/-n-n/+/ diodes.