The design of Schottky diodes for microwave regime
Abstract
A general method is presented to design microwave Schottky diodes for detection and mixing, based on correlations between imposed microwave electrical parameters and structural elements in various polarization and frequency regimes. Computer-drawn families of curves yield these correlations directly, promising a rapid choice of design parameters for any type of Si and GaAs Schottky diode.
- Publication:
-
10th European Microwave Conference
- Pub Date:
- 1981
- Bibcode:
- 1981eumw.conf..657G
- Keywords:
-
- Gallium Arsenides;
- Microwave Circuits;
- Schottky Diodes;
- Structural Design;
- Volt-Ampere Characteristics;
- Computer Techniques;
- Electric Current;
- Electrical Resistance;
- Electron Mobility;
- Signal To Noise Ratios;
- Silicon;
- Electronics and Electrical Engineering