X band GaAs FET oscillator large signal design

A large-signal, time-domain theoretical approach is developed that is based solely on the technological characteristics of the transistor. A design of this type makes it possible to obtain the frequency and output power of the oscillator for several configurations. The approach involves the integration of the propagation waves in the channel under dynamic conditions and the determination of the controlled charge in the device. Thermal effects and electron velocity reduction versus electrical field are taken into consideration. It is noted that the only data required are the technological, geometrical, and physical parameters.