Novel measurement technique allows full two-port characterization of GaAs power MESFETs

An original measurement technique has been developed which permits full two-port characterization of GaAs power MESFETs under nonlinear signal drive conditions. Measurement results are presented, showing the variation across C-band of each of the device two-port parameters with signal drive level, and their dependence on the transistor terminal loads. Results derived by this technique correlate well with those measured by the load-pull method.