A 2-watt X band FET and IMPATT diode integrated amplifier
Abstract
The design and performance of a 2-watt, 800-MHz, 1-dB bandwidth GaAs FET and IMPATT diode integrator amplifier are presented. The amplifier is described using commercially available products to attain two watts of the power output in lower X-band by means of MIC construction. The overall integrated amplifier has a dc to RF efficiency of 8.3%, including all bias circuit losses.
- Publication:
-
10th European Microwave Conference
- Pub Date:
- 1981
- Bibcode:
- 1981eumw.conf..517H
- Keywords:
-
- Amplifier Design;
- Avalanche Diodes;
- Field Effect Transistors;
- Integrated Circuits;
- Microwave Amplifiers;
- Superhigh Frequencies;
- Energy Conversion Efficiency;
- Performance Tests;
- Transistor Amplifiers;
- Electronics and Electrical Engineering