Instabilities in MOS devices

Aspects of basic MOS theory are considered along with field effect transistor theory, preparation techniques, oxide structure, and instability mechanisms. A description of investigative techniques is provided. The capacitance-voltage (C-V) methods are discussed, taking into account the basic method, the differentiation method, the integration or 'quasi-static' method, the temperature method, the capacitance derivative method, and the transient capacitance method. The conductance method is examined along with charge pumping, MOST characteristic methods, the triangular voltage sweep method, the thermally stimulated ionic conductivity method, the thermally stimulated surface potential method, and optical methods. Attention is given to surface states, mobile ions, dipolar polarization, hole trapping, electron trapping, and conduction problems and dielectric breakdown.