Dynamic modeling of physically small and high-frequency semiconductor devices

A program of research is reviewed that addressed transport in physically small (submicron-to-ultrasubmicron) and/or high frequency semiconductor devices. In devices of the 0.25 micron characteristic length, significant effects on the device performance arise from the fact that the carriers have characteristic response times on the order of the device transit time. Effects due to temporal (and spatial) memory retardation, finite-non-zero collision duration, intra-collisional field effects, and quantization within the device govern the transport. Additionally, device replication can lead to synergistic system performance. This program of study has investigated the role these effects play through utilization of full two-dimensional device simulations that incorporate the various effects.