Analysis of the temperature dependence of resistivity in N-type silicon
Abstract
This work consists of an analytical development of the observed temperature dependence of the resistivity in n-type silicon. This is accomplished by considering the temperature dependence of each physical parameter (such as electron scattering terms) contributing to resistivity in various doping ranges.
- Publication:
-
Final Report
- Pub Date:
- March 1981
- Bibcode:
- 1981bdm..rept.....G
- Keywords:
-
- Electrical Resistivity;
- N-Type Semiconductors;
- Silicon Compounds;
- Temperature Dependence;
- Additives;
- Crystal Lattices;
- Electron Scattering;
- Qualitative Analysis;
- Quantitative Analysis;
- Solid-State Physics