Device physics

The properties of junctions and barriers are investigated, taking into account homojunctions, semiconductor heterojunctions, and metal-semiconductor junctions. A description is provided of bipolar transistors and integrated circuits, giving attention to basic equations of transistor operation, band diagram and transition layers, current amplification, low-current effects, high injection effects, dynamic performance, inverse operation, lateral and geometrical effects, noise, substrate and epitaxy, diffusion and implantation, metallization, lithography, patterning, integrated-circuit components, and aspects of functional integration. Other subjects explored are related to MOS transistors and memories, charge transfer devices, microwave sources, microwave receivers, light emitting diodes, semiconductor lasers, panel electroluminescence, solar cells, infrared detectors, nuclear radiation detectors, power junction devices, and power MOS transistors.