Cyrogenic FET IF-amplifier for a mm wave mixer
Abstract
Design methods and results of a GaAs FET amplifier for 3 to 4 GHz band are described. A broadband, low noise amplifier used at room temperature, and also cryogenically cooled to reduce the noise temperature was developed. It has near-optimum noise performance (compared to spot noise figures quoted in literature) typically over a 1 GHZ (30 %) bandwidth. The amplifiers are designed as an IF-preamplifier for a mm-wave mixer to be used in radiometry.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- 1981
- Bibcode:
- 1981STIN...8418566P
- Keywords:
-
- Broadband Amplifiers;
- Cryogenic Cooling;
- Field Effect Transistors;
- Signal Mixing;
- Gallium Arsenides;
- Microwave Radiometers;
- Mixing Circuits;
- Noise Temperature;
- Preamplifiers;
- Superhigh Frequencies;
- Electronics and Electrical Engineering