Epitaxial growth of single crystal films
Abstract
An experiment in gallium arsenide liquid phase epitaxy (LPE) on a flight of the SPAR 6 is described. A general purpose LPE processor suitable for either SPAR or Space Transportation System flights was designed and built. The process was started before the launch, and only the final step, in which the epitaxial film is grown, was performed during the flight. The experiment achieved its objectives; epitaxial films of reasonably good quality and very nearly the thickness predicted for convection free diffusion limited growth were produced. The films were examined by conventional analytical techniques and compared with films grown in normal gravity.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- October 1981
- Bibcode:
- 1981STIN...8210090L
- Keywords:
-
- Containerless Melts;
- Gallium Arsenides;
- Liquid Phase Epitaxy;
- Low Gravity Manufacturing;
- Space Processing;
- Spaceborne Experiments;
- Chemical Analysis;
- Crystal Structure;
- Microgravity Applications;
- Semiconducting Films;
- Space Commercialization;
- Space Processing Applications Rocket;
- Launch Vehicles and Space Vehicles