High-low junctions for solar cell applications
Abstract
A new theoretical model to calculate the effective surface recombination velocity ( Seff) of a high-low junction with an arbitrary impurity distribution is presented. The model is applied to erfc-diffused pp+ junctions using experimental data of bandgap narrowing, lifetime and mobility. Bandgap narrowing is shown to degrade the minority carrier reflecting properties of the high-low junction. Computer results are applied for the design of BSF solar cells and to study other solar cells structures based on high-low junctions.
- Publication:
-
Solid State Electronics
- Pub Date:
- June 1981
- DOI:
- 10.1016/0038-1101(81)90072-1
- Bibcode:
- 1981SSEle..24..533D
- Keywords:
-
- Computer Aided Design;
- Electron Recombination;
- Energy Gaps (Solid State);
- Semiconductor Junctions;
- Solar Cells;
- Surface Properties;
- Carrier Density (Solid State);
- Energy Technology;
- Error Functions;
- Impurities;
- Mathematical Models;
- Minority Carriers;
- Surface Diffusion;
- Solid-State Physics